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Theoretical investigation of double perovskite A2NbTbO6 (A = Ca, Sr, Ba) for optoelectronic applications under DFT approach.
- Source :
-
Optical & Quantum Electronics . Jul2024, Vol. 56 Issue 7, p1-15. 15p. - Publication Year :
- 2024
-
Abstract
- This study involves the investigation of the double perovskite A2NbTbO6 (A = Ca, Sr, and Ba) using the PBE-GGA approximation under the quantum-based DFT (density functional theory) within the WIEN2k code. The materials A2NbTbO6 (A = Ca, Sr, and Ba) are cubic crystals with space group Fm3m-225 and non-magnetic behavior. The structural, electrical, optical, and thermoelectric characteristics of the given materials have been investigated. Band gap and density of state calculations are used to explain the electronic properties of the materials under study with the PBE-GGA approximation. The results made it abundantly evident that the materials are pure semiconductors with direct band gaps. Complex dielectric function, refractive index ƞ(ω), extinction coefficient K(ω), optical conductivity σ(ω), absorption coefficient α(ω), reflectivity R(ω), and loss parameter L(ω) are analyzed to explain the optical behavior of the materials. Charge carrier concentration (n), electrical conductivity (σ/t), Seebeck coefficient (S), power factor (PF), thermal conductivity (K/t), specific heat capacity (Cv), and magnetic susceptibility (χ) are investigated to find the material's thermal properties which show the ability of materials in green energy (eco-friendly) production devices and good candidates for optoelectronics especially for solar cell. The BoltzTraP code, which is part of the WIEN2k code, is used to calculate these properties. The cubic compounds Ca2NbTbO6, Sr2NbTbO6, and Ba2NbTbO6 have band gaps of 1.93 eV, 1.89 eV, and 1.87 eV, respectively and are direct band gap materials are confirmed from the band gap structures. By these calculations, all the characteristics are examined to produce new materials for sustainable devices and renewable energy applications like solar cells, and optoelectronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03068919
- Volume :
- 56
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Optical & Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 178151283
- Full Text :
- https://doi.org/10.1007/s11082-024-07077-0