Interface evolution behavior of Si-based adhesive structures under tensile loading based on terahertz time-domain spectroscopy.

The thickness of the bonding interface changes after the structure has been subjected to tensile load, thereby affecting the strength of the bonding structure. It is necessary to monitor the evolution of the bonding interface thickness under tensile load. Through terahertz time-domain spectroscopy imaging and scale-invariant feature transform image processing, the thickness variation of three interfaces of 150 silicon-based adhesive structures under tensile load were analyzed. It was determined that variation at the edge was larger than that in the middle area. The research results also provide data support for the bonding structure health monitoring systems. [ABSTRACT FROM AUTHOR]