Optimization of Electron Velocity in p-HEMT.

Detailed characterization of the electron mobility along the channel reveals that average mobility can be improved and the performance of both MESFET and HEMT could be optimized. A detailed electric field profile of the devices was modeled using commercially available Silvaco™ software. Measurements of I–V characteristics of transistors together with modeled field profile allowed to generate maps of carrier mobility along the channel of studied devices. Manufacturing of two and three-gate transistors provided additional degree of freedom to tailor electrical field in both multi-gate MESFETs and HEMTs. Experimental optimization of transistor performance is presented. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]