Back to Search
Start Over
Achieving n-type doped monoclinic (InxAl1-x)2O3 alloys.
- Source :
-
Journal of Applied Physics . 6/21/2024, Vol. 135 Issue 23, p1-5. 5p. - Publication Year :
- 2024
-
Abstract
- The monoclinic (In 0.25 Al 0.75) 2 O 3 alloy has been suggested as an ideal material to create monoclinic Ga 2 O 3 heterostructures, as it provides a close lattice match to β - Ga 2 O 3 along with a 1 eV conduction-band offset. Achieving intentional n -type doping in Ga 2 O 3 heterostructures is important for device applications, but this may be difficult due to the high Al content of this alloy. Here, we use density functional theory with a hybrid functional to investigate common donor dopants, in particular, Si, Sn, C, and Ge substituting on cation sites, and H interstitials, in In 2 O 3 and InAlO 3. We identify Si as the optimal donor, as it is a shallow donor for In concentrations above 14%. Its formation energy is also low, indicating that these donors will incorporate during growth. For higher In concentrations, Sn (above 33% In) and Ge (above 35% In) are also promising donors, with Sn having comparable formation energies to Si. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ALLOYS
*DENSITY functional theory
*N-type semiconductors
*TIN
*HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 135
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 178024040
- Full Text :
- https://doi.org/10.1063/5.0211069