The physical parameters of MOS structures in the presence of local mechanical stress.

• The paper focuses on the use of Raman spectroscopy to determine local mechanical stresses in metal–oxide–semiconductor (MOS) structures and its correlation with electrical parameters such as flat band voltage and contact potential difference. • The document discusses the importance of studying stress distribution in gate oxides for optimizing performance and reliability of electronic devices. It highlights the influence of stress on electrical parameters in MOS structures, emphasizing the need to consider stress in design and optimization processes. • The study demonstrates the correlation between stress and electrical parameters and the effectiveness of Raman spectroscopy in measuring stresses in MOS structures. • The results show accurate stress determinations under and beside the AlSiCu gate, impacting flat band voltage and contact potential difference values. • Experimental techniques like micro-Raman spectroscopy are essential for evaluating stress levels for material failure prevention. • The study also explores the significance of stress in affecting electrical properties of MOS structures and the relation between stresses and key electrical parameters. The development research of metal oxide semiconductors (MOS) nanomaterials provides to produce electronic modules of fast response, low manufacture cost, long work life, and energy consumption. The MOS principles nanostructures utilizing hold great potential in manufacturing and other branches of the economy. The article includes the determination of local mechanical stresses in MOS structures by optical methods and the study of the effect of these stresses on electrical parameters. The main goal of this work was to determine local mechanical stresses in MOS structures and find a correlation of these stresses with basic electrical parameters of MOS structures such as the contact potential difference and flat band voltage in a semiconductor. In the first stage of the work, an attempt at the average value of these stresses using, among others, interferometry and ellipsometry was made. These attempts failed, although they brought other interesting results not related to the main purpose of the research field. However, Raman spectroscopy proved to be an effective tool for measuring stresses in the investigated structures. The authors also determined the stresses using refractive indices based on ellipsometry measurements. The study of MOS structures can be enhanced by using interferometry and ellipsometry, which provide valuable information on changes in thickness and internal stresses. The obtained results have differed from the values presented in the literature. These studies combined with the weighting method contributed to developing, among others an analytical relationship between the refractive index n and the density of SiO 2 layers. According to the conducted studies, can be concluded that the only adequate method is Raman spectroscopy. It was possible to determine the stresses in the SiO 2 layer under the gate and nearby with an accuracy of 20 MPa and 100 MPa, respectively. Similarly, the distributions of the structure's electrical parameters were similar in shape. Based on these results, it was possible to establish a relationship between the stress and the parameters V FB and ϕ MS. In conclusion, stress in the SiO 2 layer influences the parameters of V FB and ϕ MS in the MOS structure. This method provides no limitations related to the size of the spot, oppositely to the measurements of spectroscopic ellipsometry. [ABSTRACT FROM AUTHOR]