Monolithically grown CSPbBr3 by chemical vapor deposition for Self-Powered photodetector.

• Chemical vapor deposition (CVD) technique was adopted to grow monolithic CsPbBr 3 thin films on glass substrates. • The vertically stacked device with ITO/SnO 2 /CsPbBr 3 /CuSCN/Ag configuration exhibits a photoresponsivity of 10.13 A/W at 0.05 V bias and 96 mA/W at 0 V bias. • The response time of the device in planar geometry is 241/205 ms, while the vertically stacked device has a response time of 20.51/21 ms at 0.05 V bias and 20.51/30 ms at 0 V bias. The high-quality monolithic growth of perovskite films with larger grains on any substrate is a challenging task due to the instability of morphology, carrier mobility and chemical stability. In this work, we demonstrated the strategy to grow CsPbBr 3 films with micron-sized grains along the (0 0 2) surface by chemical vapor deposition. The structural and optical characterizations have shown that the as-grown CsPbBr 3 thin films are compact and packed without pin holes and have excellent optical quality for use in high-performance optoelectronic devices. The planar photodetector with the device configuration Ag/CsPbBr 3 /Ag shows a high photoresponsivity of 506.32 A/W and a specific detectivity of 8.29 × 1012 Jones at an incident light illumination of 22.3 µW/cm2. On the other hand, the vertically stacked device with ITO/SnO 2 /CsPbBr 3 /CuSCN/Ag configuration exhibits a photoresponsivity of 10.13 A/W at 0.05 V bias and 96 mA/W under 0 V bias. Specifically, the response time of the device in planar geometry is 241/205 ms, while the vertically stacked device has a response time of 20.51/21 ms at 0.05 V bias and 20.51/30 ms at 0 V bias. The results provide a new strategy for the growth of high-quality perovskite thin films and their effective application for high-performance optoelectronic devices. [ABSTRACT FROM AUTHOR]