Investigation on the performance of deep ultraviolet edge emitting laser diodes using graded undoped AlGaN electron blocking layer (EBL).

P-AlGaN EBLs are usually used to control the overflow of electrons from the multiple quantum wells (MQWs) in AlGaN-based deep ultraviolet (DUV) edge-emitting laser diodes (EELDs). They're specially designed to prevent the excess flow of electrons from the MQW. This control is essential for maintaining the laser's efficiency and performance. Using optimized parameters of Al composition through theoretical calculations using Crosslight software helps certify the electrically driven EELD functions effectively within the desired operational range. In this study, the traditional p-AlGaN EBL within the electrically driven EELD is substituted with an undoped AlGaN EBL. This modification aims to raise the effective barrier height of the conduction band, and thus effectively stopping the electron leakage while improving the injection of holes. By optimizing the aluminum composition in the current research, efforts are made to lower the threshold current (I th) and elevate the overall enactment of the graded undoped AlGaN EBL EELD. Various structural designs, including both conventional and undoped configurations, have been successfully created and analyzed in this study. Particular attention was given to investigating the impact of grading techniques applied to the electron-blocking layer. The graded undoped AlGaN EBL EELD performed better than the highly doped AlGaN EBL EELD due to the minimized free carrier absorption loss. Specifically, it shows higher slope efficiency (S.E) of 1.45 W/A and a significantly lower I th of 790 mA. A new AlGaN EBL EELD design was tested with different layers. The ones with a graded undoped EBLs performed better than traditional AlGaN EBL EELD, improving power efficiency. The graded undoped EBLs setup also reduced the threshold current compared to traditional AlGaN EBL EELD. • Advanced Doping Strategy: We propose a novel approach to enhance the performance of AlGaN-based deep Ultraviolet (DUV) EELDs by optimizing undoping concentrations in the electron-blocking layer (EBL). • Output Power Breakthrough: Through meticulous design and theoretical calculations using the Lastip software, we achieve a significant increase in the EELD output power and capabilities, marking a remarkable advancement in DUV laser technology. • Ultraviolet Laser Emission: The designed EELD structure demonstrates the successful emission of a class-c ultraviolet laser at an impressive wavelength of 265 nm, opening doors to various applications in fields such as spectroscopy, medical diagnostics, and materials processing. • Effective Conduction Barrier: Our simulation results indicate that the optimized EBL leads to the attainment of an effective conduction band barrier height. This achievement plays a pivotal role in realizing the envisioned enhancements in EELD performance. • Performance Enhancement Factors: The proposed approach promises to deliver higher optical output power, an increased concentration of electrons and holes within MQWs, and a reduction in lasing threshold of the AlGaN based DUV EELDs. [ABSTRACT FROM AUTHOR]