STRUCTURAL FEATURES OF SILICON WITH TIN IMPURITY.

In this work, samples of single-crystalline silicon doped with tin were studied using X-ray diffraction and electron microscopy. It has been established that at a scattering angle of 2θ ≈ 36.6° in the X-ray diffraction patterns of n-Si and Si<Sn> samples, structural reflections (110) of the corresponding SiO2 nanocrystallites with lattice parameters a = b = 0,4936 нм и c = 0,5212 nm and c = 0.5212 nm, belonging to the hexagonal crystal lattice and space group P321. The formation of tin nanocrystallites with sizes of 9.1 and 8 nm in the near-surface regions of the Si<Sn> matrix crystal lattice was discovered. [ABSTRACT FROM AUTHOR]