Measurement and optimization of writing light field uniformity in dual-galvanometer laser scanning lithography system.

The light field uniformity (LFU) in lithography system is a key factor in defining the resolution across the entire micro/nano structures. In this work, a cost-effective and straightforward method based on the focused laser marking on heat-mode resist is proposed for measuring and optimizing the LFU. The factors affecting the LFU are analyzed from the perspectives of optical system aberrations and mechanical assembly error. Subsequently, marking patterns with special structures are designed based on the properties of the heat-mode resist. By analyzing the marked patterns, the LFU of the system is obtained with uniformity coefficient is 42.24%. After optimization achieved by dynamic laser power adjustment, the uniformity coefficient was notably enhanced to 96.11%. This work provides an effective method for measuring and optimizing the LFU in dual-galvanometer laser scanning lithography system. • Propose a cost-effective method to measure light field uniformity of dual-galvanometer laser scanning lithography. • The factors influencing light field uniformity are analyzed: mainly optical aberrations and mechanical assembly error. • Optimization enhanced light field uniformity from 42.24% to 96.11% and significantly reduced feature size error to 35 nm. [ABSTRACT FROM AUTHOR]