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Deep random forest with ferroelectric analog content addressable memory.

Authors :
Xunzhao Yin
Müller, Franz
Laguna, Ann Franchesca
Chao Li
Qingrong Huang
Zhiguo Shi
Lederer, Maximilian
Laleni, Nellie
Shan Deng
Zijian Zhao
Imani, Mohsen
Yiyu Shi
Niemier, Michael
Xiaobo Sharon Hu
Cheng Zhuo
Kämpfe, Thomas
Kai Ni
Source :
Science Advances. 6/7/2024, Vol. 10 Issue 23, p1-11. 11p.
Publication Year :
2024

Abstract

Deep random forest (DRF), which combines deep learning and random forest, exhibits comparable accuracy, interpretability, low memory and computational overhead to deep neural networks (DNNs) in edge intelligence tasks. However, efficient DRF accelerator is lagging behind its DNN counterparts. The key to DRF acceleration lies in realizing the branch-split operation at decision nodes. In this work, we propose implementing DRF through associative searches realized with ferroelectric analog content addressable memory (ACAM). Utilizing only two ferroelectric field effect transistors (FeFETs), the ultra-compact ACAM cell performs energy-efficient branch-split operations by storing decision boundaries as analog polarization states in FeFETs. The DRF accelerator architecture and its model mapping to ACAM arrays are presented. The functionality, characteristics, and scalability of the FeFET ACAM DRF and its robustness against FeFET device non-idealities are validated in experiments and simulations. Evaluations show that the FeFET ACAM DRF accelerator achieves ~106x/10x and ~106x/2.5x improvements in energy and latency, respectively, compared to other DRF hardware implementations on state-of-the-art CPU/ReRAM. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
23752548
Volume :
10
Issue :
23
Database :
Academic Search Index
Journal :
Science Advances
Publication Type :
Academic Journal
Accession number :
177687605
Full Text :
https://doi.org/10.1126/sciadv.adk8471