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Epitaxially regrown quantum dot photonic crystal surface emitting lasers.
- Source :
-
Applied Physics Letters . 5/27/2024, Vol. 124 Issue 22, p1-5. 5p. - Publication Year :
- 2024
-
Abstract
- Quantum dot-based epitaxially regrown photonic crystal surface emitting lasers are demonstrated at room temperature. The GaAs-based devices, which are monolithically integrated on the same wafer, exhibit ground state lasing at ∼1230 nm and excited state lasing at ∼1140 nm with threshold current densities of 0.69 and 1.05 kA/cm2, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 177609046
- Full Text :
- https://doi.org/10.1063/5.0202834