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Knowledge generation and diffusion in science & technology: an empirical study of SiC-MOSFET based on scientific papers and patents.
- Source :
-
Technology Analysis & Strategic Management . Jul2024, Vol. 36 Issue 7, p1587-1603. 17p. - Publication Year :
- 2024
-
Abstract
- Scientific papers and patents are reliable sources of knowledge carriers for measuring science and technology advances, predicting technological trends, and formulating technology strategies. Although the idea of entirely using the two knowledge carriers is rapidly emerging in academic discussion, a theoretical framing of the comparisons is still not present in literature. This study conducts bibliometrics on 2986 patent families and 4755 scientific papers related to silicon carbide metal–oxide-semiconductor field-effect transistor (SiC-MOSFET) to identify its technological trends and compare the similarities and differences in knowledge generation and diffusion in science and technology. Our methodological framework consists of a combination of geographic distribution (identifying the research developments and distribution), cooperation networks (analyzing organisation collaboration and individual research cooperation), noun phrase co-occurrence clusters (discovering hot research topics), and the global main path analyses of citation networks (tracking the trajectory of knowledge flows). Ultimately, our results contribute to recent bibliometric paradigms beyond discovering the role of scientific papers and patents in promoting science and technology integration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09537325
- Volume :
- 36
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Technology Analysis & Strategic Management
- Publication Type :
- Academic Journal
- Accession number :
- 177561735
- Full Text :
- https://doi.org/10.1080/09537325.2022.2106419