Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111).

MLA

Ma, Peng-Cheng, et al. “Wafer-Scale 30° Twisted Bilayer Graphene Epitaxially Grown on Cu0.75Ni0.25 (111).” Chinese Physics B, vol. 33, no. 6, June 2024, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1674-1056/ad2d53.

APA

Ma, P.-C., Zhang, A., Zhen, H.-R., Jiang, Z.-C., Yang, Y.-C., Ding, J.-Y., Liu, Z.-T., Liu, J.-S., Shen, D.-W., Yu, Q.-K., Liu, F., Zhang, X.-F., & Liu, Z.-H. (2024). Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu0.75Ni0.25 (111). Chinese Physics B, 33(6), 1–5. https://doi.org/10.1088/1674-1056/ad2d53

Chicago

Ma, Peng-Cheng, Ao Zhang, Hong-Run Zhen, Zhi-Cheng Jiang, Yi-Chen Yang, Jian-Yang Ding, Zheng-Tai Liu, et al. 2024. “Wafer-Scale 30° Twisted Bilayer Graphene Epitaxially Grown on Cu0.75Ni0.25 (111).” Chinese Physics B 33 (6): 1–5. doi:10.1088/1674-1056/ad2d53.