High-performance Thin-Film Solar Solar Cells Based on AlGaAs/GaAs Heterojunction and Localized Surface Plasmon Oscillations.

Traditional solar cells face the challenges of high cost and limited conversion efficiency, which seriously limits their promotion in practical applications. Therefore, this article proposes a novel GaAs thin-film solar cell based on algae's/GaAs heterojunction. It utilizes the finite difference time domain (FDTD) method to simulate the propagation of electromagnetic waves and the process of light absorption in the cell under specific boundary conditions. The simulation experimental results demonstrate that the introduction of indium tin oxide (ITO) and Ag plasma into solar cell structure significantly enhances the light trapping capability of the cell. Under the irradiation of standard light AM1.5, the proposed cell structure maintains an absorption rate of more than 95% in the wavelength range of 300–743 nm, with an average absorption rate of 97.29%. Especially at the wavelength of 547 nm, it has an absorption rate of up to 99.87%. In addition, the short-circuit current is 30.152 mA/cm2, the open-circuit voltage is 1.226 V, and the photoelectric conversion efficiency (PCE) is increased to 33.22%. The research result indicates when light illuminates the surface of the metal particles after incorporating Ag nanoparticles into the ITO grating, the free electrons within the metal are excited, resulting in a resonance effect. This allows for a highly concentrated and localized electromagnetic wave on the metal surface, which improving the solar cell's absorption efficiency of sunlight. The research will promote the development of photovoltaic technology and provide an effective strategy and reference for the manufacture of high-performance thin-film solar cells. [ABSTRACT FROM AUTHOR]