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P-doped ultrathin g-C3N4/In2S3 S-scheme heterojunction enhances photocatalytic hydrogen production and degradation of ofloxacin.
- Source :
-
Physica B . Jul2024, Vol. 685, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- In this work, ultrathin lamellar g-C 3 N 4 /In 2 S 3 S-scheme heterojunctions doped with P were synthesized by urea recrystallization and investigated to see which ratio was more favorable for photocatalysis. The P doping formed a new Fermi energy level and reduced the forbidden bandwidth. The ultrathin lamellar structure facilitated rapid charge transfer, and the formation of S-scheme heterojunction, the presence of the interfacial electric field, and band bending effectively separated strong redox-capable electron-hole pairs, thus significantly improving the photocatalytic performance. Among the prepared materials, the 50UP-C 3 N 4 /In 2 S 3 photocatalyst with 50 % UP-C 3 N 4 mass fraction showed optimal photocatalytic H 2 production performance, with a hydrogen production rate of 12,387 μmol h−1 g−1. Moreover, it showed good performance in photocatalytic degradation, with a degradation efficiency of up to 90.2 % of ofloxacin after 120 min of light exposure. This article provided a new perspective on the synthesis of other photocatalysts with carbazide-based S-scheme heterojunction structures. [Display omitted] [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 685
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 177285918
- Full Text :
- https://doi.org/10.1016/j.physb.2024.416053