Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation.

MLA

Li, Jiabing, et al. “Enhanced Stability in InSnO Transistors via Ultrathin In-Situ AlOx Passivation.” Applied Surface Science, vol. 663, Aug. 2024, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.apsusc.2024.160175.

APA

Li, J., Chen, Y., Gao, Q., Cao, T., Ma, J., Li, D., Zheng, L., Pan, X., Yang, J., Liu, P., Liu, Y., & Liu, L. (2024). Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation. Applied Surface Science, 663, N.PAG. https://doi.org/10.1016/j.apsusc.2024.160175

Chicago

Li, Jiabing, Yayi Chen, Qingguo Gao, Tianfan Cao, Junxi Ma, Da Li, Likun Zheng, et al. 2024. “Enhanced Stability in InSnO Transistors via Ultrathin In-Situ AlOx Passivation.” Applied Surface Science 663 (August): N.PAG. doi:10.1016/j.apsusc.2024.160175.