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Electric field-effect thermal transistors and logic gates.
- Source :
-
International Journal of Heat & Mass Transfer . Aug2024, Vol. 227, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- • A prototype of electric field-effect thermal transistor (EFETT) and the derived thermal logic gates are proposed. • The EFETT works on modulation of near-field heat flux between the source and drain semiconductors by gate voltage. • Demonstrated that arbitrary thermal logic gates can be built based on the EFETT conveniently. • The performance of EFETTs and thermal logic gates are analyzed and characterized quantitatively. A prototype of electric field-effect thermal transistor (EFETT) and the derived thermal logic gates are proposed, using electric potentials as inputs and temperature as outputs. The EFETT works on the modulation of near-field thermal photons transferred between the source and the drain semiconductors by the electric field-effect induced by gate voltage, thus altering the heat current and terminal temperature. It is demonstrated that arbitrary thermal logic gates can be built based on the EFETT conveniently. The characteristics of the EFETTs and the realized thermal logic gates are analyzed quantitatively. The proposed prototype opens a new avenue for the design of thermal transistors and thermal circuits which may motivate their applications for thermal information processing and thermal management. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00179310
- Volume :
- 227
- Database :
- Academic Search Index
- Journal :
- International Journal of Heat & Mass Transfer
- Publication Type :
- Academic Journal
- Accession number :
- 177200722
- Full Text :
- https://doi.org/10.1016/j.ijheatmasstransfer.2024.125557