Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction.

MLA

Piotrowicz, C., et al. “Impact of the Recessed Gate Depth on the GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor Performances: New Insights on Mobility Extraction.” Journal of Applied Physics, vol. 135, no. 17, May 2024, pp. 1–11. EBSCOhost, https://doi.org/10.1063/5.0205840.

APA

Piotrowicz, C., Mohamad, B., Malbert, N., Bécu, S., Ruel, S., & Le Royer, C. (2024). Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction. Journal of Applied Physics, 135(17), 1–11. https://doi.org/10.1063/5.0205840

Chicago

Piotrowicz, C., B. Mohamad, N. Malbert, S. Bécu, S. Ruel, and C. Le Royer. 2024. “Impact of the Recessed Gate Depth on the GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor Performances: New Insights on Mobility Extraction.” Journal of Applied Physics 135 (17): 1–11. doi:10.1063/5.0205840.