Cd0.2Zn0.8O nanowire thin film transistor for low kickback high-speed AMLCD circuit applications.

This paper reports the Cd 0.2 Zn 0.8 O channel cylindrical gate-all-around nanowire thin-film transistor (CY-GAA-NWTFT) for high-speed active-matrix liquid crystal display (AMLCD) pixel circuit with minimal kickback voltage. The AC/DC, analog, and energy efficiency of this device are investigated against the variation in lateral (channel length) as well as vertical dimension (oxide thickness) using technology computer aided design (TCAD) device simulation environment. Further, the behavior of CY-GAA-TFT is crosschecked by implementing it on resistive load digital inverter circuit followed by transient analysis to calculate delay of the inverter circuit. Moreover, static analysis has been also performed to evaluate its voltage transfer curve (VTC) to derive its noise margin and voltage gain. The execution of the proposed CY-GAA-NWT device on AMLCD pixel circuit indicates tremendous improvement in performance in terms of high-speed applications and low kickback voltage. • An elaborate comparative study of Cd 0.2 Zn 0.8 O channel cylindrical gate-all-around nanowire thin-film transistor (CY-GAA-NWTFT) device characteristics against its channel lengths and oxide thicknesses variation. • The delay of (CY-GAA-NWTFT) device with L = 140 nm and with t ox = 35 nm are in the range of picoseconds i.e., 0.404 & 0.498 ps respectively, which is much smaller than the previously reported 2D structure (Cd x Zn 1 − x O based TFT) which was in the range of microseconds i.e., 0.152 μs. Thus, the significant improvement in the device in terms of high-speed application. • The noise margin of the device with L = 140 nm and with t ox = 35 nm has the highest value when compared to the other channel lengths i.e., 160 nm and 180 nm and oxide thicknesses i.e., 45 nm and 55 nm respectively. • Tremendous improvement in mobility is observed for both channel length and oxide thickness variation with L = 140 nm (μ e f f , max = 278 cm2/V.s μ e ff , max ) & μ F E , max = 706 cm2/V.s) with t ox = 35 nm (μ e f f , max = 312 cm2/V.s μ e ff , max ) & μ F E , max = 849 cm2/V.s) when compared to the other channel lengths i.e., 160 nm and 180 nm and oxide thicknesses i.e., 45 nm and 55 nm respectively. • The CY-GAA-NWTFT device is negligible kickback voltage of approximately 0.2 mV which is much smaller than previously reported (Cd x Zn 1 − x O based TFT) which was 1.29 V. [ABSTRACT FROM AUTHOR]