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Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals.
- Source :
-
Nanomaterials (2079-4991) . Apr2024, Vol. 14 Issue 8, p678. 11p. - Publication Year :
- 2024
-
Abstract
- Non-volatile memory based on thin-film transistor is crucial for system-on-panel and flexible electronic systems. Achieving high-performance and reliable thin-film transistor (TFT) memory still remains challenging. Here, for the first time, we present a ZnO TFT memory utilizing self-assembled Au nanocrystals with a low thermal budget, exhibiting excellent memory performance, including a program/erase window of 9.8 V, 29% charge loss extrapolated to 10 years, and remarkable endurance characteristics. Moreover, the memory exhibits favorable on-state characteristics with mobility, subthreshold swing, and current on–off ratio of 17.6 cm2V−1s−1, 0.71 V/dec, and 107, respectively. Our study shows that the fabricated TFT memory has great potential for practical applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 14
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Nanomaterials (2079-4991)
- Publication Type :
- Academic Journal
- Accession number :
- 176907526
- Full Text :
- https://doi.org/10.3390/nano14080678