Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy

Abstract: We report molecular beam epitaxy (MBE) growth and device performance of 1.3μm GaInNAs/GaNAs single-quantum well lasers on GaAs substrates. Record low threshold current densities of 300, 320 and 360A/cm2 for cavity lengths of 1200, 1000 and 800μm, respectively, and a transparency current density of only 84A/cm2 are achieved for the 100μm wide broad area lasers. A characteristic temperature of 108K is measured in the temperature range of 8–70°C for a laser with a cavity length of 1000μm. We find that optimization of the RF nitrogen source during the MBE growth plays a crucial role in reducing the threshold current density. [Copyright &y& Elsevier]