The effect of boron on the structure and lattice parameters of diamond single crystals.

Boron doped diamonds (BDD) with boron concentration above 1019 at./cm3, grown under conditions of high isostatic pressure by the temperature gradient method, were studied by Transmission Electron Microscopy methods, EELS analysis and X-ray diffraction analysis. It was shown that boron is distributed unevenly in the grown crystal. It was found that in places of maximum boron content, interplanar distances d 111 increase from 0.206 to approximately 0.2065 nm. Parallel bands were discovered, the boundaries of which are fragments of the intermediate carbon phase (ICP-phase). Numerous twins along the {111} plane, as well as fragments of rhombohedral 9R phase, were discovered. [Display omitted] [ABSTRACT FROM AUTHOR]