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Sliding ferroelectricity in kagome-B2X3 (X = S, Se, Te) bilayers.

Authors :
Guo, Yan-Dong
Meng, Rui-Jie
Hu, Xue-Qin
Lin, Li-Yan
Jiang, Yue
Yang, Ming-Yu
You, Yun
Zhang, Lan-Qi
Xu, Yi-Long
Yan, Xiao-Hong
Source :
Applied Physics Letters. 4/8/2024, Vol. 124 Issue 15, p1-6. 6p.
Publication Year :
2024

Abstract

Different from the honeycomb monolayer (like graphene), the single-layer boron chalcogenide B2X3 (X = S, Se, Te) exhibits a kagome lattice. Using the first-principles calculations, the existence of sliding ferroelectricity in van der Waals kagome-B2X3 bilayers is demonstrated. The sliding ferroelectricity results from the breaking of the inversion symmetry by interlayer sliding. In addition, there are multiple stable states in a unit cell for kagome-lattice bilayers. The bandgap is found to vary with sliding distance. By choosing specific pathways, not only the out-of-plane polarization but also the in-plane polarization can be reversed by interlayer sliding. Such a simultaneous reversal for both in-plane and out-of-plane polarizations by sliding would be useful for applications in various devices. These behaviors are found in all the three configurations (X = S, Se, Te), suggesting they are the intrinsic features of such systems and may throw light on the development of future devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
124
Issue :
15
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
176579144
Full Text :
https://doi.org/10.1063/5.0198134