Improving the sensing performance of rambutan-like W18O49 based gas sensor for n-butanol by Ni doping.

Element doping can improve the gas sensing performance of metal oxide semiconductor (MOSs). In this paper, the rambutan-like Ni-doped W 18 O 49 are synthesized by one-step solvothermal route. The prepared Ni 0.05 W 18 O 49 possesses larger specific surface area (130.5 m2g−1) and more plentiful oxygen vacancy than the pristine sample. Interestingly, compared with other sensors, the Ni 0.05 W 18 O 49 sensor has the highest response (182.4) for 50 ppm n-butanol at 160℃ with short response-recovery time (14 s / 241 s). Moreover, the selectivity test shows that the Ni 0.05 W 18 O 49 sensor has higher response for n-butanol than the other five volatile gases. The response value of the sensor to n-butanol is almost unchanged over five repeatability tests and the long-term stability tests. • The rambutan-like Ni 0.05 W 18 O 49 sample is prepared through Ni element doping. • The sample has large specific surface area, high oxygen vacancies. • The Ni 0.05 W 18 O 49 sensor had good sensing properties to n-butanol. [ABSTRACT FROM AUTHOR]