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An 8-way series-parallel combiner based power amplifier for mm-wave 5G communication in 40-nm CMOS.
- Source :
-
AEU: International Journal of Electronics & Communications . Apr2024, Vol. 177, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- This paper presents a power amplifier (PA) with an 8-way series–parallel power combiner for 5G communication. By theoretical analysis of the S-parameters matrix and the equivalence of the impedance network, the design of the multi-port combiner is transformed into a dual-port on-chip transformer, and the bandwidth expansion is achieved without increasing the in-band gain ripple based on the mismatch-consistent magnetically coupled resonator (MCR) technique. As a validation of the methodology, the 8-way series–parallel power combiner PA is implemented in 40-nm CMOS Bulk process. The large-signal performances of the PA at 31 GHz are 21.36 dBm, 17.1 dBm, and 25.7 % for P sat , OP 1dB , and PAE max , respectively. The proposed PA has a peak S 21 of 25.1 dB and a 3-dB bandwidth of 23.5–46.4 GHz, which fully covers the 5G new radio (NR) frequency range2 (FR2) operating band, and the S 21 ripple is less than 1-dB in the range of 26.0–42.3 GHz, which achieves a broadband flat frequency response and supports the feasibility of the design. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14348411
- Volume :
- 177
- Database :
- Academic Search Index
- Journal :
- AEU: International Journal of Electronics & Communications
- Publication Type :
- Academic Journal
- Accession number :
- 176470603
- Full Text :
- https://doi.org/10.1016/j.aeue.2024.155238