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Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0001) surface
- Source :
-
Journal of Crystal Growth . Feb2005, Vol. 275 Issue 1/2, pe2275-e2280. 0p. - Publication Year :
- 2005
-
Abstract
- Abstract: Epitaxial Ge islands on a SiC(0001) substrate have been examined by reflection high-energy electron diffraction (RHEED). These islands have been obtained by depositing three monolayers of Ge at 500°C on a graphitized SiC (6√3×6√3)R30° reconstructed surface. This surface has been chosen for its ability to support epitaxial Ge island growth in a Volmer-Weber mode. The RHEED technique has allowed us to determine the epitaxy relationship and in-plane orientations between relaxed Ge and SiC(0001). Typical transmission electron diffraction patterns indicate that Ge grows according to only one epitaxy relationship Ge{111}||SiC(0001) that corresponds to two in-plane orientations, a preferential one and a minority one rotated by 30° around the growth 〈111〉-Ge (or [0001]-SiC) axis. Double spot RHEED patterns also point out a twinning for each in-plane orientation, a consequence of the three-fold order of the 〈111〉-Ge axis. [Copyright &y& Elsevier]
- Subjects :
- *EPITAXY
*CRYSTAL growth
*OPTICAL diffraction
*SILICON carbide
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 275
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 17645881
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2004.11.364