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Bandgap engineering of spinel-structured oxide semiconductor alloys.
- Source :
-
Journal of Physics D: Applied Physics . 6/28/2024, Vol. 57 Issue 25, p1-8. 8p. - Publication Year :
- 2024
-
Abstract
- We investigated bandgap engineering of spinel-structured Mg B 2O4 (B = Al, Ga, In) alloys. The trend of bandgap change was tunable from approximated 7.8–3.6 eV by substituting group III cation atoms in Mg B 2O4. To evaluate the doping possibility, we have calculated the natural band alignment and doping pinning energy of the normal and inverse spinel structures of Mg B 2O4 alloys. The calculated doping pinning energies show that spinel-structured Mg B 2O4 alloys can potentially control the electron concentration, but hole doping is difficult. Our computational results are expected to provide new insights into the doping control of ultra-wide bandgap semiconductors. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ALLOYS
*SEMICONDUCTORS
*ENGINEERING
*OXIDES
*SPINEL
Subjects
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 57
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 176363703
- Full Text :
- https://doi.org/10.1088/1361-6463/ad35d1