Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material.

The creation of an electronic component base based on microelectromechanical systems is one of the main directions of the development of modern microelectronics and the basis for the construction of a new generation of radar and communication systems. This is due to the possibility of obtaining fundamentally new electrophysical properties of devices obtained on the basis of microsystem technology. Classification of devices based on microsystem technology includes: switches, varactors, resonators, actuators, filters, etc. Currently, the most widely used radio frequency MEMS switches. This is due, in particular, to the linearity of the transmission characteristics of radio frequency signal switches in a wide frequency range. Radio frequency devices built on the basis of microsystem technology have a good level of isolation (>30 dB) and low insertion losses (<0.5 dB). One of the factors that have a significant impact on the operation of the RF MEMS switch is the choice of materials. The design of the RF MEMS switch consists of the following main elements: substrate, conducting lines, dielectric, beam structures. The choice of materials for each of the listed elements is important, but the substrate material has the most significant effect on the operation of the RF MEMS switch. [ABSTRACT FROM AUTHOR]