Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics.

In this work, the main electronic parameters of the performed Al-(CdxZn1-xO)-pSi Metal/Interface-layer/Semiconductor (MIS) type Schottky Diodes (SDs) were investigated by utilizing IV characteristics at 300 K. The (CdxZn1-xO) interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factor(n), potential barrier ФBo, Rs, shunt resistance (Rsh), and rectification rate (RR) (Iforward/Ireverse) values were calculated based on thermionic emission (TE) theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height (BH), ФBo, and RR changed from 4.347, 0.582 eV, 5.74x10³ to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong function of voltage, calculation method, and the doping rate of the Cadminium (Cd) interfacial layer. The best ratio for Cd: ZnO was determined to be 30%; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of Metal/Semiconductor (MS) type SDs. [ABSTRACT FROM AUTHOR]