Electronic structure and optical properties of In- and Vacancy-doped 6H-SiC: a first-principles study.

MLA

Wang, Xin, et al. “Electronic Structure and Optical Properties of In- and Vacancy-Doped 6H-SiC: A First-Principles Study.” Journal of Molecular Modeling, vol. 30, no. 3, Mar. 2024, pp. 1–8. EBSCOhost, https://doi.org/10.1007/s00894-024-05886-4.

APA

Wang, X., Yuan, X., Zhou, H., Yang, Y., Lu, D., Yang, S., & Bian, Y. (2024). Electronic structure and optical properties of In- and Vacancy-doped 6H-SiC: a first-principles study. Journal of Molecular Modeling, 30(3), 1–8. https://doi.org/10.1007/s00894-024-05886-4

Chicago

Wang, Xin, Xin Yuan, Huan Zhou, Yuqing Yang, Dawei Lu, Song Yang, and Ying Bian. 2024. “Electronic Structure and Optical Properties of In- and Vacancy-Doped 6H-SiC: A First-Principles Study.” Journal of Molecular Modeling 30 (3): 1–8. doi:10.1007/s00894-024-05886-4.