Microwave Schottky Diodes based on Single GaN Nanowires.

A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz. [ABSTRACT FROM AUTHOR]