Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction.

Abstract—The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaA-sP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08 and 0.14% per one pass (round-trip) at temperatures of 20 and 90°C, respectively. [ABSTRACT FROM AUTHOR]