Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV.

Authors :: Nikitina, I. P.
Kalinina, E. V.
Zabrodski, V. V.
Source :: Technical Physics. Dec2023, Vol. 68 Issue 12, p683-688. 6p.
Publication Year :: 2023
Abstract: The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work. [ABSTRACT FROM AUTHOR]

Subjects :: *GETTERING
*PHOTODETECTORS
*IRRADIATION
*DETECTORS
*PROTONS
*RADIATION

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