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Electrochemical properties of lithium metal doped C60 fullerene for battery applications.

Authors :
Kosar, Naveen
Asgar, Moneeba
Mahmood, Tariq
Ayub, Khurshid
Sajid, Hasnain
Albaqami, Munirah D.
Gilani, Mazhar Amjad
Source :
Materials Science in Semiconductor Processing. Jun2024, Vol. 175, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

The development of anode materials with an optimum cell voltage and better stability is an important challenge for high-performance Li-ion batteries. In this study, we have investigated the electrochemical potential of pristine and Li-doped C 60 fullerene through density functional theory (DFT) simulations, with a focus on their potential applications in lithium-ion batteries. Our findings reveal that exohedral doping with a more electronegative counter anion can significantly increase the cell voltage. Particularly, when lithium cations are encapsulated within C 60 fullerene with antimony hexachloride (SbC l 6 −) as the counter anion, the highest cell voltage of 2.06 V is achieved. Furthermore, we have explored the impact of substituting carbon atoms with boron, nitrogen, phosphorus, and silicon on the Gibbs free energy change and cell potential. These substitutions led to an acceptable cell voltage compared to pristine C 60 fullerenes where the most suitable cell voltage of 1.75 V is observed for SbCl 6 /Li@C 59 B. This enhancement occurs because boron increases the electron deficiency of C 60 fullerene, thereby promoting stronger interactions with electronegative counter anions. These systems with a cell voltage of 1.75 V are deemed ideal candidates in lithium-ion batteries. [Display omitted] • The electrochemical potential of C 60 fullerenes doped with counter anion is studied. • The cell potential is enhanced by substitution of carbon atom with hetero-atoms. • The most suitable cell voltage of 1.75 V is observed for SbCl 6 /Li@C 59 B. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13698001
Volume :
175
Database :
Academic Search Index
Journal :
Materials Science in Semiconductor Processing
Publication Type :
Academic Journal
Accession number :
176068532
Full Text :
https://doi.org/10.1016/j.mssp.2024.108256