Thermal annealing induced graphite/diamond structure processed by high-voltage hydroxide ion treatments.

[Display omitted] • Surface graphitization of diamond is achieved through thermal annealing. • Graphite/diamond pattern is selectively etched by hydroxide ion treatments. • The structure transformation is investigated via AFM, XPS, Raman and TEM. • The specific contact resistance is obtained by TML model. Ohmic contacts with low specific contact resistance are necessary for fabrication of diamond electronic devices. This work reports that graphite/diamond ohmic contacts can be obtained by thermal annealing of diamond, patterned by hydroxide ion treatment. Surface graphitization of diamond is achieved through rapid thermal annealing at 1050 °C in vacuum. The thickness of graphite layer is found to be dependent on the duration of annealing with an approximate rate of 3.3 ∼ 3.6 nm/minute. The alteration in surface structure is analyzed using Raman spectra, showing a continuously enhanced G peak with increasing annealing time. Early stages of graphitization are discovered by X-ray photoelectron spectroscopy, after annealing diamond samples for merely 0.5 ∼ 2 min. Additionally, a distinct atomic interface between graphite and diamond is observed via cross-sectional transmission electron microscopy. Further, the surface graphite is selectively etched by hydroxide ion treatments, protected by gold patterns. In the end, the specific contact resistance of the graphite/diamond contact is determined to be 2.53 × 10-4 Ω cm2 employing the transmission line model. [ABSTRACT FROM AUTHOR]