Extraction of gap states in AlSiO/AlN/GaN metal-oxide-semiconductor field-effect transistors using the multi-terminal capacitance–voltage method.

Direct extraction of gap states from a metal-oxide-semiconductor field-effect transistor (MOSFET) in which inversion electrons and holes in a p-type body coexist is challenging. We demonstrate gap-state extraction in lateral-type GaN MOSFETs with high channel mobilities using multi-terminal capacitance–voltage (C–V) methods. The gate stack of the MOSFET was composed of AlSiO/AlN/p-type GaN formed on a p+/n+ GaN tunnel junction structure. The substrate electrode was short-circuited to a p-type body layer through the tunnel junction. The MOSFET was equipped with gate, source, drain, body, and substrate electrodes. When the gate was the high side and the other electrodes were the low side in the AC circuit, a V-shaped C–V curve was obtained because of electron inversion and hole accumulation. When the body/substrate electrodes were connected to the ground level (i.e., split C–V method), the inversion electrons between the gate and source/drain electrodes could be evaluated. We proposed a "reverse" split C–V method in which the source/drain electrodes are grounded and the body/substrate electrodes are connected to the low side. This method enabled extraction of gap states near the valence-band maximum of GaN, with exclusion of the overlap capacitance and the capacitance due to inversion electrons. The proposed method demonstrated overall gap states in the GaN MOSFET with a wide bandgap. The results suggest that hole traps with discrete energy levels caused negative bias instability (NBI) in the GaN MOSFET. Furthermore, NBI and discrete gap states were consistently suppressed by Mg doping at >1018 cm−3 into a p-type body. [ABSTRACT FROM AUTHOR]