Numerical modeling based on the analytical solution of the steady-state small signal photocarrier grating equations and analysis of field-dependent measurements for noncrystalline Si: H samples.

The available experimental data of field-dependent steady-state photocarrier grating (SSPG) are numerically modeled employing the derived formula of β (where β represents the ratio of coherent to incoherent currents in SSPG technique) obtained from the analytical solution of the small signal steady-state grating problem by applying Galerkin's method. This numerical analysis shows the extent of validity and success of using the derived formula of β [R. I. Badran, ResultsPhys. 17, 103079 (2020)] in reproducing the field-dependent data for noncrystalline Si: H samples. The best quality of fittings is reproduced when χ 2 value is minimum. This analysis provides us with approximate and corrected values for each of transport quantities, namely, the small-signal response lifetime, electron and hole mobilities that are found in agreement with the values obtained from the applications of other methods. For two polymorphous (pm) Si: H samples, the average estimated, corrected values for the carrier density and mobility-lifetime product, namely, N o ∼ 1. 3 9 × 1 0 1 5 cm − 3 and 1. 5 2 × 1 0 1 5 cm − 3 and ( μ n + μ p) τ ∼ 9. 5 × 1 0 − 8 cm2V − 1 and ∼ 7. 2 × 1 0 − 8 cm2V − 1 , respectively, are obtained. The analysis is also extended to analyze the field-dependent data for nanocrystalline (nc) Si: H samples at low temperatures. The extracted values of N o and ( μ n + μ p) τ are ∼ 2. 0 × 1 0 1 5 cm − 3 and ∼ 7. 5 × 1 0 − 8 cm2V − 1 . [ABSTRACT FROM AUTHOR]