Revealing the reason for enhanced CZTSSe device performance after Ag heavily doped into absorber surface.

MLA

Wang, Siyu, et al. “Revealing the Reason for Enhanced CZTSSe Device Performance after Ag Heavily Doped into Absorber Surface.” Journal of Chemical Physics, vol. 160, no. 9, Mar. 2024, pp. 1–11. EBSCOhost, https://doi.org/10.1063/5.0195439.

APA

Wang, S., Shen, Z., Liu, Y., & Zhang, Y. (2024). Revealing the reason for enhanced CZTSSe device performance after Ag heavily doped into absorber surface. Journal of Chemical Physics, 160(9), 1–11. https://doi.org/10.1063/5.0195439

Chicago

Wang, Siyu, Zhan Shen, Yue Liu, and Yi Zhang. 2024. “Revealing the Reason for Enhanced CZTSSe Device Performance after Ag Heavily Doped into Absorber Surface.” Journal of Chemical Physics 160 (9): 1–11. doi:10.1063/5.0195439.