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α-Si3N4 dendrites and whiskers fabricated using electron irradiation technology.
- Source :
-
CrystEngComm . 3/14/2024, Vol. 26 Issue 10, p1464-1471. 8p. - Publication Year :
- 2024
-
Abstract
- Silicon nitride (Si3N4) has great potential for applications in photoelectric and semiconductor fields. In this study, a novel strategy of fabricating Si3N4 crystals is reported, and the morphology of α-Si3N4 can be controlled. The aBN/SiO2/Si wafers were designed and irradiated by a high-energy electron beam for 2 min using home-made equipment. Tree-like α-Si3N4 dendrites and [001]-oriented unbranched α-Si3N4 whiskers can be synthesized by controlling the electron beam energy. Related formation mechanisms were analyzed based on componential and structural characterization using a scanning electron microscope and high-resolution transmission electron microscope. In addition, photoluminescence measurements indicate that the synthesized α-Si3N4 exhibit unique photoluminescence properties. This is attributed to α-Si3N4 forming abundant Si–Si bonds, Si dangling bonds, N dangling bonds and oxygen bonds in the synthesis process. These findings provide new insights into fabricating high-quality Si3N4 crystals, as well as developing related high-performance micro- or nano-devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14668033
- Volume :
- 26
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- CrystEngComm
- Publication Type :
- Academic Journal
- Accession number :
- 175850754
- Full Text :
- https://doi.org/10.1039/d3ce01235b