Cite
Investigation of atomic layer deposition methods of Al2O3 on n-GaN.
MLA
Tadmor, Liad, et al. “Investigation of Atomic Layer Deposition Methods of Al2O3 on N-GaN.” Journal of Applied Physics, vol. 135, no. 8, Feb. 2024, pp. 1–9. EBSCOhost, https://doi.org/10.1063/5.0189543.
APA
Tadmor, L., Vandenbroucke, S. S. T., Bahat Treidel, E., Brusaterra, E., Plate, P., Volkmer, N., Brunner, F., Detavernier, C., Würfl, J., & Hilt, O. (2024). Investigation of atomic layer deposition methods of Al2O3 on n-GaN. Journal of Applied Physics, 135(8), 1–9. https://doi.org/10.1063/5.0189543
Chicago
Tadmor, Liad, Sofie S. T. Vandenbroucke, Eldad Bahat Treidel, Enrico Brusaterra, Paul Plate, Nicole Volkmer, Frank Brunner, Christophe Detavernier, Joachim Würfl, and Oliver Hilt. 2024. “Investigation of Atomic Layer Deposition Methods of Al2O3 on N-GaN.” Journal of Applied Physics 135 (8): 1–9. doi:10.1063/5.0189543.