First-principles calculation of lattice distortion, electronic structure, and bonding properties of GeTe-based and PbSe-based high-entropy chalcogenides.

MLA

Hasan, Sahib, et al. “First-Principles Calculation of Lattice Distortion, Electronic Structure, and Bonding Properties of GeTe-Based and PbSe-Based High-Entropy Chalcogenides.” Journal of Applied Physics, vol. 135, no. 8, Feb. 2024, pp. 1–19. EBSCOhost, https://doi.org/10.1063/5.0196796.

APA

Hasan, S., Adhikari, P., San, S., Rulis, P., & Ching, W.-Y. (2024). First-principles calculation of lattice distortion, electronic structure, and bonding properties of GeTe-based and PbSe-based high-entropy chalcogenides. Journal of Applied Physics, 135(8), 1–19. https://doi.org/10.1063/5.0196796

Chicago

Hasan, Sahib, Puja Adhikari, Saro San, Paul Rulis, and Wai-Yim Ching. 2024. “First-Principles Calculation of Lattice Distortion, Electronic Structure, and Bonding Properties of GeTe-Based and PbSe-Based High-Entropy Chalcogenides.” Journal of Applied Physics 135 (8): 1–19. doi:10.1063/5.0196796.