Transmittance oscillation in amorphous semiconductors: Revisited.

Transmittance self-oscillation discovered in amorphous GeSe2 films has attracted considerable interest, while its underlying mechanism remains controversial. We suggest that the oscillation is governed by at least two kinds of changes; one occurs in absorption for thin (∼ 6 μ m) films and the other in refractive-index for thick (∼ 1 mm) plates. We also detail a model, which assumes recoverable micro-crystallization. An idea for increasing the oscillation frequency is proposed for possible applications. [ABSTRACT FROM AUTHOR]