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A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique.

Authors :
Seo, Soyeon
Lee, Jinho
Lee, Yongho
Shin, Hyunchol
Source :
Sensors (14248220). Feb2024, Vol. 24 Issue 4, p1087. 15p.
Publication Year :
2024

Abstract

A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14248220
Volume :
24
Issue :
4
Database :
Academic Search Index
Journal :
Sensors (14248220)
Publication Type :
Academic Journal
Accession number :
175648861
Full Text :
https://doi.org/10.3390/s24041087