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Efficient metal–organic framework-based dual co-catalysts system assist CdS for hydrogen production from photolysis of water.

Authors :
Bi, Yiyang
Xu, Kun
Wang, Ying
Li, Xin
Zhang, Xupeng
Wang, Jiabo
Zhang, Yu
Liu, Qun
Fang, Qianrong
Source :
Journal of Colloid & Interface Science. May2024, Vol. 661, p501-511. 11p.
Publication Year :
2024

Abstract

[Display omitted] • A novel composite photocatalyst NiS/CdS@DUT-67 is prepared. • The separation and transport of photogenerated carriers are assisted by NiS and DUT-67. • NiS/CdS@DUT-67 achieves high hydrogen production rate as 9618 μmol·g NiS/CdS −1·h−1. Metal-organic framework materials (MOFs) and their derivatives have been widely used in the field of photocatalytic water decomposition for hydrogen production. In this study, NiS/CdS was initially acquired and subsequently combined with DUT-67 via ultrasound to create a unique ternary photocatalyst NiS/CdS@DUT-67. The rate of hydrogen production for NiS/CdS@DUT-67 is 9618 μmol·g NiS/CdS −1·h−1 for NiS/CdS@DUT-67, which is 32 times and 2.5 times higher than that for CdS and NiS/CdS, respectively. Of particular interest is the fact that even after 50 h of photocatalysis, the hydrogen production rate did not show a significant decrease, demonstrating its excellent stability compared to CdS and NiS/CdS. In this ternary system, NiS and DUT-67 function as dual co-catalysts for CdS, collaborating to enhance charge separation during the photocatalysis. This study presents a clear demonstration of the advantages of utilizing metal–organic framework derivatives (MOF-derivatives) cophotocatalysts and their synergistic effect, resulting in improved photocatalytic activity and stability of semiconductors. This innovative approach provides a new perspective on constructing photocatalytic materials with exceptional performance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00219797
Volume :
661
Database :
Academic Search Index
Journal :
Journal of Colloid & Interface Science
Publication Type :
Academic Journal
Accession number :
175638845
Full Text :
https://doi.org/10.1016/j.jcis.2024.01.158