Improved Capacitive Energy Storage at High Temperature via Constructing Physical Cross‐Link and Electron–Hole Pairs Based on P‐Type Semiconductive Polymer Filler.

MLA

Yan, Chuanfang, et al. “Improved Capacitive Energy Storage at High Temperature via Constructing Physical Cross‐Link and Electron–Hole Pairs Based on P‐Type Semiconductive Polymer Filler.” Advanced Functional Materials, vol. 34, no. 8, Feb. 2024, pp. 1–15. EBSCOhost, https://doi.org/10.1002/adfm.202312238.

APA

Yan, C., Wan, Y., Long, H., Luo, H., Liu, X., Luo, H., & Chen, S. (2024). Improved Capacitive Energy Storage at High Temperature via Constructing Physical Cross‐Link and Electron–Hole Pairs Based on P‐Type Semiconductive Polymer Filler. Advanced Functional Materials, 34(8), 1–15. https://doi.org/10.1002/adfm.202312238

Chicago

Yan, Chuanfang, Yuting Wan, Hongping Long, Huang Luo, Xuan Liu, Hang Luo, and Sheng Chen. 2024. “Improved Capacitive Energy Storage at High Temperature via Constructing Physical Cross‐Link and Electron–Hole Pairs Based on P‐Type Semiconductive Polymer Filler.” Advanced Functional Materials 34 (8): 1–15. doi:10.1002/adfm.202312238.