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Machine Learning on Multiplexed Optical Metrology Pattern Shift Response Targets to Predict Electrical Properties.

Authors :
Ashby, Thomas J.
Truffert, Vincent
Cerbu, Dorin
Ausschnitt, Kit
Charley, Anne-Laure
Verachtert, Wilfried
Wuyts, Roel
Source :
IEEE Transactions on Semiconductor Manufacturing. Feb2024, Vol. 37 Issue 1, p46-58. 13p.
Publication Year :
2024

Abstract

Doing high throughput high accuracy metrology in small geometries is challenging. One approach is to build easily measurable proxy targets onto dies and make a predictive model based on those signals. We use optical Pattern Shift Response (PSR) proxy targets to build predictive models of the electrical characteristics of devices in the Back End Of Line (BEOL). Given the wide choice of PSR targets, we explore how to select combinations of them to maximise the utility of the features for building an accurate Machine Learning (ML) model; we call this approach Multiplexed Optical Metrology. We also explore the trade-off between chip area dedicated to targets and achievable accuracy. We run ML experiments using different selections of targets measured at different stages of BEOL processing: post-lithography and post-Chemical-Mechanical-Planarisation (CMP). Our results show that a) reasonable predictive performance can be achieved for a reasonable area budget; b) ML model performance across target families varies significantly, thus justifying the need for careful selection of targets; c) longitudinal measurements of targets increases accuracy for no extra area penalty; d) increasing the number of targets gives some improvement in accuracy for a dataset of this size, but relatively small compared to the increase in area budget needed. Ultimately we aim to do die-level yield prediction using these techniques. We discuss how collecting a larger dataset with appropriate yield information is the logical next step to achieving this. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08946507
Volume :
37
Issue :
1
Database :
Academic Search Index
Journal :
IEEE Transactions on Semiconductor Manufacturing
Publication Type :
Academic Journal
Accession number :
175370956
Full Text :
https://doi.org/10.1109/TSM.2023.3339330