Relaxation processes during gas-jet deposition of diamond structures from a cloud of microwave-activated gas.

The gas-jet method of diamond structures deposition with using of microwave discharge activation of precursor gases is considered. Gas-dynamic processes in gas flow in the nozzle and behind it the deposition chamber is analyzed by Direct Simulation Monte Carlo method. The peculiarities of gas mixture flow into vacuum and the chamber with background pressure 80 torr are studied. A strong effect of the distance from the nozzle exit to the substrate on the atomic hydrogen dissipation from the jet active region is shown. The essential influence of processes in the compressed layer close to substrate on the diamond deposition was discovered and described. [ABSTRACT FROM AUTHOR]