Cite
Conventional and back-side focused ion beam milling for off-axis electron holography of electrostatic potentials in transistors
MLA
Dunin-Borkowski, Rafal E., et al. “Conventional and Back-Side Focused Ion Beam Milling for off-Axis Electron Holography of Electrostatic Potentials in Transistors.” Ultramicroscopy, vol. 103, no. 1, Apr. 2005, pp. 67–81. EBSCOhost, https://doi.org/10.1016/j.ultramic.2004.11.018.
APA
Dunin-Borkowski, R. E., Newcomb, S. B., Kasama, T., McCartney, M. R., Weyland, M., & Midgley, P. A. (2005). Conventional and back-side focused ion beam milling for off-axis electron holography of electrostatic potentials in transistors. Ultramicroscopy, 103(1), 67–81. https://doi.org/10.1016/j.ultramic.2004.11.018
Chicago
Dunin-Borkowski, Rafal E., Simon B. Newcomb, Takeshi Kasama, Martha R. McCartney, Matthew Weyland, and Paul A. Midgley. 2005. “Conventional and Back-Side Focused Ion Beam Milling for off-Axis Electron Holography of Electrostatic Potentials in Transistors.” Ultramicroscopy 103 (1): 67–81. doi:10.1016/j.ultramic.2004.11.018.