Performance analysis and losses comparison of 10 kW GaN HEMT-based T-type inverter for electric vehicle application.

This article has the advantage of wide-bandgap (WBG) devices with high switching frequencies, which includes a T-type three-phase inverter topology for an electric vehicle application. The WBG device, such as, GaN HEMT-based T-type inverter topology operating at a switching frequency of 100 kHz, is rated at 600 V, 22.5 A, with Rds(on) of 50 m-ohm. It has the lowest power loss benefits to achieve high power density throughout the system. At each switching state, the comparison results of WBG devices are accumulated at different operating load currents under various junction temperatures to evaluate the overall inverter's efficiency. The GaN HEMT's minority carriers are not significantly involved, which allows high switching devices with low on-resistance. Also, the bidirectional switches are connected in parallel to avoid short-circuit distortion and voltage stress across the switches. There is no need of freewheeling diodes to provide reverse recovery charge since the GaN device, in particular, has the better capacity of zero reverse recovery. This leads to the breakdown of a reliable 10 kW DC-AC three-phase T-type three-level inverter system. Analysing and comparing the turn-on losses and turn-off losses, conduction losses, and power loss of the GaN HEMT with the conventional SiC MOSFET-based T-type inverter. The results of loss estimation at the same interval of time obtained from MATLAB and OPAL-RT are similar to the system configuration. [ABSTRACT FROM AUTHOR]