中红外硅基光波导的发展现状.

As the basic passive device in silicon photonic integrated chip, silicon-based optical waveguide is the channel for optical signal transmission. Because of its good performance and compatibility with CMOS(Complementary Metal Oxide Semiconductor) process, silicon-based optical waveguide has been widely used. Silicon photonic integrated circuits used in telecommunications and data centers have been gradually commercialized. The potential applications of mid-infrared band in free-space communication, sensing, environmental monitoring and other fields have attracted much attention from researchers in recent years. In this study, the research status of mid-infrared silicon-based optical waveguides in recent years is analyzed. The research results of waveguide material platform of SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si3N4)、GON(Ge-on Si3N4) and manufacturing process platform of SOPS(Si on Porous Si), Pedestal, Freestanding, Suspended, LOCOS(Local Oxidation of Silicon), plasma structure are summarized. So far, the propagation loss of most monocrystalline silicon in MIR(Mid-Infrared) platform is about 0.7~3.0 dB·cm-1. The application prospects of different types of waveguides are discussed and compared, which provides a reference for the research and development, application and commercialization of mid-infrared silicon-based optical waveguides. [ABSTRACT FROM AUTHOR]